inchange semiconductor isc product specification isc silicon pnp power transistor 2SA1667 description collector-emitter breakdown voltage- : v (br)ceo = -150v(min) dc current gain- : h fe = 60(min)@ (v ce = -10v, i c = -0.7a) complement to type 2sc4381 applications designed for tv vertical output ,audio output driver and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -6 v i c collector current-continuous -2 a i b base current-continuous -1 a p c collector power dissipation @t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn www..net
inchange semiconductor isc product specification isc silicon pnp power transistor 2SA1667 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -25ma ; i b = 0 -150 v v ce (sat) collector-emitter saturation voltage i c = -0.7a; i b = -0.07a b -1.0 v i cbo collector cutoff current v cb = -150v ; i e =0 -10 a i ebo emitter cutoff current v eb = -6v; i c =0 -10 a h fe dc current gain i c = -0.7a ; v ce = -10v 60 c ob output capacitance i e = 0; v cb = -10v; f= 1mhz 60 pf f t current-gain?bandwidth product i e = 0.2a ; v ce = -12v 20 mhz switching times t on turn-on time 0.4 s t stg storage time 1.5 s t f fall time i c = -1a; i b1 = -i b2 = -0.1a; v cc = -20v; r l = 20 0.5 s isc website www.iscsemi.cn 2
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